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BSC190N12NS3GATMA1
BSC190N12NS3GATMA1Reference image

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Mfr. #:
BSC190N12NS3GATMA1
Batch:
new
Description:
Surface mount N channel 120 V 8.6A (Ta), 44A (Tc) 69W (Tc) PG-TDSON-8-1
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Infineon Technologies
OptiMOS?
Tape and Reel (TR)
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 120 V
Current at 25°C - Continuous Drain (Id) 8.6 A (Ta), 44 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 19 mOhm @ 39 A, 10 V
Vgs(th) (max) at Id 4 V @ 42 μA
Gate Charge?(Qg) (max) at Vgs 34 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 2300 pF @ 60 V
FET function -
Power dissipation (max) 69W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TDSON-8-1
Package/case 8-PowerTDFN
BSC190
Other product information

Advantage price,BSC190N12NS3GATMA1 in stock can be shipped on the same day

In Stock: 28661
Qty.Unit PriceExt. Price
1+ $2.0829 $2.0829
10+ $1.7254 $17.254
100+ $1.3736 $137.36
500+ $1.1623 $581.15
1000+ $0.9862 $986.2
2000+ $0.9369 $1873.8
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
28661
Minimum:
1
MPQ:
1
Multiples:
1
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