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FF200R12KE3B2HOSA1
FF200R12KE3B2HOSA1Reference image

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Mfr. #:
FF200R12KE3B2HOSA1
Batch:
new
Description:
IGBT Module Half Bridge 1200 V 295 A 1050 W Base Mount Module
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Tray
IGBT Type -
Configuration Half-bridge
Voltage - Collector-Emitter Breakdown (max) 1200 V
Current - Collector (Ic) (max) 295 A
Power - max 1050 W
Vce(on) (max) 2.15V @ 15V, 200A
Current - Collector Cutoff (max) 5 mA
Vce(on) (max) 14 nF @ 25 V
Input Standard
NTC Thermistor None
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package/Case Module
Supplier Device Package Module
Other product information

Advantage price,FF200R12KE3B2HOSA1 in stock can be shipped on the same day

In Stock: 5
Qty.Unit PriceExt. Price
1+ $199.5196 $199.5196
10+ $186.8772 $1868.772
30+ $179.8515 $5395.545
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
5
Minimum:
1
MPQ:
1
Multiples:
1
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